tsm 2301a 20v p-channel mosfet 1/6 version: b14 sot - 23 key parameter performance parameter value unit v ds -20 v r ds(on) (max) v gs = -4.5v 130 m ? v gs = -2.5v 190 q g 7.2 nc features advance trench process technology high density cell design for ultra low on-resistan ce block diagram p-channel mosfet ordering information part no. package packing TSM2301Acx rfg sot-23 3kpcs / 7 reel note: g denotes for halogen- and antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds absolute maximum ratings (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current i d -2.8 a pulsed drain current i dm -10 a continuous source current (diode conduction) (note 1,2) i s -1 a maximum power dissipation t a =25 o c p d 0.7 w t a =70 o c 0.45 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit junction to ambient thermal resistance (pcb mounted ) r ? ja 175 o c/w pin definition: 1. gate 2. source 3. drain
tsm 2301a 20v p-channel mosfet 2/6 version: b14 electrical specifications (t c =25 o c unless otherwise noted) parameter conditions symbol min typ max unit static (note 3) drain-source breakdown voltage v gs = 0v, i d = 250a bv dss -20 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) -0.6 -0.7 -1 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -20v, v gs = 0v i dss -- -- 1.0 a drain-source on-state resistance v gs = -4.5v, i d = -2.8a r ds(on) -- 90 130 m ? v gs = -2.5v, i d = -2.0a -- 120 190 diode forward voltage i s = -1a, v gs = 0v v sd -- -0.7 -1.3 v dynamic (note 4,5) gate resistance v gs = v ds =0v, f=1mhz r g -- 7.5 -- ? total gate charge v ds = -6v, i d = -2.8a, v gs = -4.5v q g -- 7.2 -- nc gate-source charge q gs -- 2.2 -- gate-drain charge q gd -- 1.2 -- input capacitance v ds = -15v, v gs = 0v, f = 1.0mhz c iss -- 480 -- pf output capacitance c oss -- 460 -- reverse transfer capacitance c rss -- 10 -- switching (note 4,5) turn-on delay time v dd = -6v, r l = 6 ? , v gen = -4.5v, r g = 6 ? t d(on) -- 38 -- ns turn-on rise time t r -- 25 -- turn-off delay time t d(off) -- 43 -- turn-off fall time t f -- 5 -- notes: 1. pulse width limited by the maximum junction temp erature 2. surface mounted on a 1 in 2 pad of 2oz cu, t 10 sec. 3. pulse test: pw 300s, duty cycle 2% 4. for design aid only, not subject to production t esting. 5. switching time is essentially independent of ope rating temperature.
tsm 2301a 20v p-channel mosfet 3/6 version: b14 electrical characteristics curve output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 2301a 20v p-channel mosfet 4/6 version: b14 electrical characteristics curve on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to -ambient
tsm 2301a 20v p-channel mosfet 5/6 version: b14 sot-23 mechanical drawing unit: millimeters marking diagram 1a = device code y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 2301a 20v p-channel mosfet 6/6 version: b14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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